Samsung Electronics Announces HBM5/HBM5E Process Upgrades, Targets Over 50% Market Share for HBM4

Samsung Electronics' Memory Development Vice President revealed at GTC 2026 that it will upgrade the manufacturing processes of HBM5 and HBM5E memory. The base logic die of HBM5 will be upgraded to 2nm process, while the DRAM die of HBM5E will use 1d nm process; HBM4E will retain the same process as HBM4.

Samsung regards HBM4 as the core of its HBM memory business, aiming to capture over 50% of the market share. Additionally, the company plans to accelerate HBM development to achieve an annual iteration speed synchronized with Nvidia.