Samsung says HBM5 will use 2nm base chip, performance up 50%

Samsung's foundry tech development head confirmed plans to use a 2nm base chip for next-gen HBM5 memory, moving up from the 4nm base used in HBM4 and HBM4E. HBM5 is expected to run over 50% faster than HBM4E, with higher-density TSV to meet industry demands. The 2nm process aims for big gains in performance and energy efficiency. On HBM4E, Samsung already used flexible 4nm tech to hit 14+ Gbps speeds and better heat management.